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    • 专利摘要:
    This process comprises the successive stages: a) providing a substrate (1) comprising a first structured electrode (E1); b) successively forming first and second bilayer stacks on the first structured electrode (E1), each bilayer stack successively comprising first and second layers (20, 21; 30, 31) produced in transparent conductive oxides which can be selectively etched ; c) etching the second bilayer stack for an area intended to accommodate a blue sub-pixel (PB) and for an area intended to accommodate a green sub-pixel (PV); d) engraving the first two-layer stack for the area intended to accommodate the blue sub-pixel (PB); e) forming a stack (5) of organic electroluminescent layers, configured to emit white light; f) forming a second electrode (E2) on the stack (5) of organic electroluminescent layers so as to obtain an optical resonator with the first electrode (E1). Figure 15
    公开号:FR3091035A1
    申请号:FR1873304
    申请日:2018-12-19
    公开日:2020-06-26
    发明作者:Laurent Mollard；Tony Maindron；Myriam TOURNAIRE
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    Description
    Title of the invention: METHOD OF MANUFACTURING A PIXEL OF A MICROSCREEN WITH OLEDs
    Technical area
    The invention relates to the technical field of organic light-emitting diode (OLEDs) micro-screens.
    The invention finds its application in particular in the manufacture of glasses and headsets with virtual or augmented reality, camera viewfinders, head-up displays, pico-projectors etc.
    State of the art
    A pixel of a micro-screen with organic light-emitting diodes with upward emission known from the state of the art, in particular from document EP 1 672 962 A1, successively comprises:
    - a substrate;
    - a first electrode, reflecting in the visible range, and formed on the substrate;
    - a spacer layer, formed on the first electrode;
    - a stack of organic electroluminescent layers, configured to emit white light, and formed on the spacer layer,
    - a second electrode, semi-transparent in the visible range, and formed on the stack; the first and second electrodes forming an optical resonator.
    The spacer layer has first, second, and third portions having thicknesses adapted so that the optical resonator respectively authorizes the transmission of red, green and blue lights from the white light emitted by the stack, so as to define red, green and blue sub-pixels respectively.
    Such a pixel of the state of the art makes it possible to envisage dispensing with colored filters thanks to the optical resonator of the Eabry-Perot type forming an interference filter. The range of filtered wavelengths is determined by the thicknesses of the first, second and third portions of the spacer layer allowing the thickness of the optical cavity (defined by the first and second electrodes) to be adjusted so that the optical resonator authorizes respectively the transmission of red, green and blue lights resulting from the white light emitted by the stack of organic electroluminescent layers.
    This type of filtering can be obtained in a similar manner for a down-emission micro-screen. To simplify the terminology, we will continue to speak of a resonator, even if the interference effects are much less when transmitted down.
    However, such a pixel of the state of the art is not entirely satisfactory insofar as the first, second and third portions of the spacer layer are formed on the first electrode by successive deposits, this which can cause a problem of precision in the control of their thicknesses.
    [0008] Furthermore, it is known from document US 2005/0142976 A1 to use:
    - a polycrystalline ITO layer for the third portion of the spacer layer (blue sub-pixel),
    - a stack of two polycrystalline ITO layers for the second portion of the spacer layer (green sub-pixel),
    - a stack of three polycrystalline ITO layers for the first portion of the spacer layer (red sub-pixel).
    During the manufacturing process, a first layer of polycrystalline ITO is formed on the first electrode and then a first layer of amorphous ITO is deposited (full plate type deposit) on the first layer of polycrystalline ITO. The first layer of amorphous ITO is then selectively etched -with an engraving agent suitable for an area intended to receive a blue sub-pixel, the first layer of polycrystalline ITO forming a barrier layer. Then thermal annealing is applied to the first layer of amorphous ITO to form a second layer of polycrystalline ITO.
    Similarly, a second layer of amorphous ITO is again deposited (full plate type deposit) and then selectively etched:
    - for the area intended to receive the blue sub-pixel, the first layer of polycrystalline ITO forming a barrier layer, and
    - for an area intended to accommodate a green sub-pixel, the second layer of polycrystalline ITO forming a barrier layer.
    Finally, thermal annealing is applied to the second layer of amorphous ITO in order to form a third layer of polycrystalline ITO.
    Such a method of the technique allows good control of the thickness of the spacer layer for the red, green and blue sub-pixels. However, such a state-of-the-art method is not entirely satisfactory in terms of operating time and ease of implementation. Indeed, the deposition and etching phases cannot be chained quickly due to the thermal annealing which must be applied to amorphous TITO.
    Statement of the invention
    The invention aims to remedy all or part of the aforementioned drawbacks. To this end, the subject of the invention is a method for manufacturing a pixel of a micro-screen with organic light-emitting diodes, comprising the successive steps:
    a) providing a substrate comprising a first structured electrode;
    b) successively forming first and second bilayer stacks on the first structured electrode, each bilayer stack successively comprising first and second layers produced respectively in first and second materials which are transparent conductive oxides which can be etched selectively;
    c) etching the second bilayer stack for an area intended to accommodate a blue sub-pixel and for an area intended to accommodate a green sub-pixel, the second bilayer stack being left intact under an area intended to accommodate a red subpixel;
    d) engraving the first bilayer stack for the area intended to accommodate the blue subpixel, the first bilayer stack being left intact under the area intended to accommodate the green sub-pixel;
    e) forming a stack of organic electroluminescent layers, configured to emit white light, and extending into the zones intended to accommodate the red, green and blue sub-pixels;
    f) forming a second electrode on the stack of organic electroluminescent layers so as to obtain an optical resonator with the first electrode; step b) being executed so that:
    - the first two-layer stack has a thickness suitable for the optical resonator to allow the transmission of green light,
    - the first and second bilayer stacks have a total thickness suitable for the optical resonator to allow the transmission of red light. Thus, such a method according to the invention makes it possible to control the thicknesses of the bilayer stacks in a satisfactory manner thanks to step b) allowing deposits of the full plate type and thanks to steps c) and d) of etching. In addition, such a method according to the invention makes it possible to chain a phase of deposits - step b) - and an etching phase - steps c) and d) - of two-layer stacks, without requiring interruptions related to thermal annealing. as in the state of the art, which leaves additional latitude in controlling the thicknesses. Such a method according to the invention therefore allows a gain in terms of operating time and ease of implementation.
    Definitions
    - By "micro-screen" means a screen of which each pixel has an area less than or equal to 30 pm by 30 pm.
    - By "substrate" means a self-supporting physical support, made of a base material preferably allowing the integration of an electronic device or an electronic component. For example, a substrate is conventionally a wafer cut out of a monocrystalline ingot of semiconductor material.
    - By "bilayer stack" means either a single bilayer structure successively comprising the first and second layers, or a set of stacked bilayer structures (e.g. 2 to 4) each successively comprising the first and second layers.
    - By "structured electrode" means an electrode having a discontinuous surface defining a set of patterns.
    - By "transparent conductive oxide" means an oxide having:
    an intensity transmission coefficient greater than or equal to 70%, preferably greater than or equal to 80%, more preferably greater than or equal to 85%, even more preferably greater than or equal to 90%, averaged over the visible range, an electrical conductivity at 300 K greater than or equal to 10 2 S / cm.
    - By "visible range" means an electromagnetic spectrum between 380 nm and 780 nm.
    - By "selectively etched" means that the second material can be etched without attacking the first material, and vice versa. In practice, the etching agent is chosen so that the etching speed of the second material (respectively of the first material) is at least ten times greater than that of the first material (respectively of the second material).
    - By "thickness" means the dimension along the normal to the surface of the pixel or sub-pixel.
    The method according to the invention may include one or more of the following characteristics.
    According to a characteristic of the invention, step a) comprises a step consisting in coating the first structured electrode with an intermediate layer made of the second material, the intermediate layer having a thickness suitable for the optical resonator to allow transmission of blue light;
    step b) being executed so that:
    - the first two-layer stack and the intermediate layer have a total thickness suitable for the optical resonator to allow the transmission of green light,
    - the first and second bilayer stacks and the intermediate layer have a total thickness suitable for the optical resonator to allow the transmission of red light.
    Thus, an advantage provided by such an intermediate layer is to be able to protect the first structured electrode before step b), with an encapsulation role. For this purpose, a second material will preferably be chosen which makes it possible to protect the first structured electrode from air and from humidity.
    According to a characteristic of the invention, the first material is a zinc oxide ZnO, preferably doped with aluminum, and the second material is tin oxide SnO 2
    Thus, such first and second materials can be etched selectively by choosing a suitable etching agent, for example hydrofluoric acid at 0.1% which makes it possible to etch the ZnO selectively with respect to SnO 2 . In addition, such first and second materials have very close refractive indices, which makes it possible to avoid reflections at the interface between the first and second layers of the bilayer stacks.
    According to a characteristic of the invention, step c) comprises the successive steps: Ci) etching the tin oxide SnO 2 of the second bilayer stack by dry or wet etching, c 2 ) etching the oxide ZnO zinc from the second bilayer stack by wet etching.
    According to a characteristic of the invention, step d) comprises the successive steps: di) etching the tin oxide SnO 2 of the first bilayer stack by dry or wet etching, d 2 ) etching the oxide ZnO zinc from the first two-layer stack by wet etching.
    According to a characteristic of the invention, step c) includes a step c 0 ) consisting of masking the area intended to receive the red sub-pixel with a photosensitive resin.
    Thus, an advantage provided is to be able to leave intact the second two-layer stack under the area intended to accommodate the red sub-pixel.
    According to a characteristic of the invention, step d) includes a step d 0 ) consisting of masking the area intended to receive the green sub-pixel with a photosensitive resin.
    Thus, an advantage provided is to be able to leave intact the first bilayer stack under the area intended to accommodate the green sub-pixel.
    According to a characteristic of the invention, step e) is preceded by a step e 0 ) consisting of engraving the first and second bilayer stacks for areas intended to extend between the red, green sub-pixels and blue.
    Thus, an advantage provided is being able to electrically isolate the red, green and blue sub-pixels therebetween.
    According to a characteristic of the invention, step b) is carried out so that: - the first layer of each bilayer stack has a thickness of between 10 nm and 100 nm,
    - The second layer of each bilayer stack has a thickness less than or equal to 10 nm.
    According to a characteristic of the invention, the first and second electrodes are made of a metallic material, preferably selected from Al, Ag, Pt, Cr, Ni, W, and / or made of a transparent conductive oxide.
    Such metallic materials have both a high intensity reflection coefficient in the visible range, and a high electrical conductivity. We prefer an oxide, electrically conductive and transparent in the visible range, when the electrode must be transparent or semi-transparent.
    According to a characteristic of the invention, the substrate provided during step a) is transparent in the visible range, the first structured electrode provided during step a) is semi-transparent in the visible range, the second electrode formed during step f) is reflective in the visible range.
    By "transparent" is meant that the substrate has an intensity transmission coefficient greater than or equal to 70%, preferably greater than or equal to 80%, more preferably greater than or equal to 85%, even more preferably greater than or equal to 90%, averaged over the visible range.
    By "semi-transparent" is meant that the first structured electrode has an intensity transmission coefficient between 30% and 70% averaged over the visible range.
    By "reflective" is meant that the second electrode has a reflection coefficient in intensity greater than or equal to 70%, preferably greater than or equal to 80%, more preferably greater than or equal to 85%, even more preferably greater or equal to 90%, averaged over the visible range.
    Thus, an advantage provided is to obtain a so-called down-emitting structure, that is to say through the substrate.
    According to a characteristic of the invention, the substrate provided during step a) is made of a semiconductor material, preferably silicon, or made of glass, the first structured electrode provided during the step a) is reflective in the visible range, the second electrode formed during step f) is semi-transparent in the visible range.
    By "semiconductor" is meant that the material has an electrical conductivity at 300 K of between 10 8 S.cm 1 and 10 2 S.cm '.
    By "reflecting" is meant that the first structured electrode has a reflection coefficient in intensity greater than or equal to 70%, preferably greater than or equal to 80%, more preferably greater than or equal to 85%, even more preferably greater than or equal to 90%, averaged over the visible range.
    By "semi-transparent" is meant that the second electrode has an intensity transmission coefficient of between 30% and 70% averaged over the visible range.
    Thus, an advantage provided is to obtain a so-called upward-emitting structure, that is to say through the second electrode. The substrate can then include a circuit for controlling the red, green and blue sub-pixels without harming the light efficiency of the micro-screen. We will choose a TFT type circuit (Thin Film Transistors in English) when the substrate is made of glass, and a CMOS type circuit (“Complementary Metal Oxide Semiconductor” in English) when the substrate is made of a semiconductor material, in particular Si.
    Brief description of the drawings
    Other characteristics and advantages will appear in the detailed description of different embodiments of the invention, the presentation being accompanied by examples and references to the accompanying drawings.
    Figures 1 to 15 are schematic sectional views along the normal to the substrate, illustrating steps of a method according to the invention.
    [Fig.l]
    Figure 1 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig.2]
    Figure 2 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig.3]
    Figure 3 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig.4]
    Figure 4 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig.5]
    Figure 5 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig.6]
    Figure 6 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig.7]
    Figure 7 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig.8]
    Figure 8 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig.9]
    Figure 9 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig. 10]
    Figure 10 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig. 11]
    Figure 11 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig. 12]
    Figure 12 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig. 13]
    Figure 13 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig. 14]
    Figure 14 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    [Fig. 15]
    Figure 15 is a schematic sectional view along the normal to the substrate, illustrating a step in a method according to the invention.
    It should be noted that the drawings described above are schematic and are not to scale for the sake of readability and to simplify their understanding.
    Detailed description of the embodiments
    Identical elements or ensuring the same function will have the same references for the different embodiments, for the sake of simplification.
    As illustrated in FIGS. 1 to 15, an object of the invention is a method for manufacturing a pixel of a micro-screen with organic light-emitting diodes, comprising the successive steps:
    a) providing a substrate 1 comprising a first structured electrode El;
    b) successively forming first and second bilayer stacks 2, 3 on the first structured electrode, each bilayer stack 2, 3 successively comprising first and second layers 20, 21; 30, 31 produced respectively in first and second materials which are transparent conductive oxides which can be selectively etched;
    c) etching the second bilayer 3 stack for an area intended to accommodate a blue PB sub-pixel and for an area intended to accommodate a PV green sub-pixel, the second bilayer 3 stack being left intact under an area intended to accommodate a sub -pixel red PR;
    d) engraving the first two-layer stack 2 for the zone intended to receive the blue subpixel PB, the first two-layer stack 2 being left intact under the zone intended to receive the green sub-pixel PV;
    e) forming a stack 5 of organic electroluminescent layers, configured to emit white light, and extending into the zones intended to accommodate the red, green and blue sub-pixels PR, PV, PB;
    f) forming a second electrode E2 on the stack 5 of organic electroluminescent layers so as to obtain an optical resonator with the first electrode El;
    step b) being executed so that:
    - the first two-layer stack 2 has a thickness suitable for the optical resonator to allow the transmission of green light,
    - the first and second bilayer stacks 2, 3 have a total thickness suitable for the optical resonator to allow the transmission of red light. Step a) is illustrated in Figure 1. Step b) is illustrated in Figure 3. Step c) is illustrated in Figures 4 to 6. Step d) is illustrated in Figures 7 to 9. Step e) is shown in Figure 14. Step f) is shown in Figure 15.
    Substrate and types of architectures
    According to a first architecture called downward emission:
    - the substrate 1 provided during step a) is transparent in the visible range, and can be made of glass,
    - the first structured electrode El provided during step a) is semi-transparent in the visible range, and can be produced for example in a transparent conductive oxide,
    - the second electrode E2 formed during step f) is reflective in the visible range, and can be produced, for example, from a metallic material.
    According to a second architecture called upward emission:
    - the substrate 1 provided during step a) is made of a semiconductor material, preferably silicon, or made of glass,
    the first structured electrode E1 provided during step a) is reflective in the visible range, and can for example be made of a metallic material,
    - the second electrode E2 formed during step f) is semi-transparent in the visible range, and can for example be made of a transparent conductive oxide.
    First structured electrode
    The first structured electrode E1 is advantageously made from a metallic material, preferably selected from Al, Ag, Pt, Cr, Ni, W, or made from a transparent conductive oxide.
    The first structured electrode E1 is preferably an anode. However, the first electrode E1 may be a cathode if the structure of the stack 5 of organic electroluminescent layers is reversed.
    Step a) may include the steps:
    aj provide the substrate 1;
    a 2 ) depositing the first electrode E1 on the substrate 1 by a full plate type deposition, according to a deposition technique known to those skilled in the art;
    a 3 ) structure the first electrode El by a lithogravure.
    The patterns of the first structured electrode E1 are preferably separated by a width of between 0.6 μm and 1 μm. This width makes it possible to obtain a pitch of a matrix of sub-pixels of a micro-screen preferably between 4 μm and 5 μm.
    When the architecture is emission down, the first structured electrode El has a thickness suitable for being semi-transparent in the visible range. The first electrode E1 can then be produced for example in a transparent conductive oxide (e.g. ITO). When the architecture is emitting upwards, the first structured electrode El has a thickness adapted to be reflective in the visible range. The first electrode E1 can then be made, for example, from a metallic material.
    Formation of bilayer stacks
    The first material is advantageously a zinc oxide ZnO, preferably doped with aluminum. The second material is advantageously tin oxide SnO 2 . Advantageously, first and second materials will be chosen which have sufficiently close refractive indices in order to avoid reflections at the interface between the first and second layers 20, 21; 30, 31 of the two-layer stacks 2, 3. By way of example, the first and second materials advantageously have refractive indices with a difference of less than or equal to 25%, preferably less than or equal to 20%.
    Step b) is carried out by deposition techniques known to those skilled in the art, for example by ALD ("Atomic Layer Deposition" in English ").
    Step b) is advantageously carried out so that:
    the first layer 20, 30 of each two-layer stack 2, 3 has a thickness of between 10 nm and 100 nm,
    - The second layer 21, 31 of each two-layer stack 2, 3 has a thickness less than or equal to 10 nm.
    Burning of the bilayer stacks
    Step c) advantageously comprises the successive steps:
    Ci) etching the tin oxide SnO 2 of the second bilayer stack 3 by a dry or wet etching, c 2 ) etching the zinc oxide ZnO of the second bilayer stack 3 by a wet etching.
    Step cj is illustrated in Figure 5. Step c 2 ) is illustrated in Figure 6.
    Step c) advantageously comprises a step c 0 ) consisting in masking the area intended to receive the red sub-pixel PR with a photosensitive resin 6. Step c 0 ) is illustrated in FIG. 4. As illustrated in FIG. 10, the photosensitive resin 6 is removed before step e) by a removal technique ("stripping" in English ") known from skilled in the art.
    Step cj is carried out with an etching agent making it possible to selectively etch the tin oxide SnO 2 relative to the zinc oxide ZnO. During step Ci), the first layer 30 of the second bilayer stack 3 acts as a stop layer for the etching of the second layer 31 of the second bilayer stack 3. Alternatively, it is possible to provide a thickness sufficiently significant ZnO (ie the first layer 30 of the second bilayer 3 stack) in order to compensate for a possible over-etching of SnO 2 (ie the second layer 31 of the second bilayer 3 stack).
    Step c 2 ) is carried out with an etchant for selectively etching the zinc oxide ZnO relative to the tin oxide SnO 2 , for example with hydrofluoric acid (HL) to 0.1%. During step c 2 ), the second layer 21 of the first two-layer stack 2 acts as a stop layer for etching the first layer 30 of the second two-layer stack 3.
    Step d) advantageously comprises the successive steps:
    di) etching the tin oxide SnO 2 of the first bilayer stack 2 by dry or wet etching, d 2 ) etching the zinc oxide ZnO of the first bilayer stack 2 by wet etching.
    Step di) is illustrated in Figure 8. Step c 2 ) is illustrated in Figure 9.
    Step d) advantageously includes a step d 0 ) consisting in masking the zone intended to receive the green PV sub-pixel with a photosensitive resin 6. Step d 0 ) is illustrated in FIG. 7. As illustrated in FIG. 10, the photosensitive resin 6 is removed before step e) by a removal technique ("stripping" in English ") known from skilled in the art.
    Step di) is carried out with an etching agent making it possible to selectively etch the tin oxide SnO 2 with respect to the zinc oxide ZnO. During step di), the first layer 20 of the first bilayer 2 stack acts as a stop layer for the etching of the second layer 21 of the first bilayer 2 stack.
    Step d 2 ) is carried out with an etchant for selectively etching the zinc oxide ZnO relative to the tin oxide SnO 2 . During step d 2 ), the intermediate layer 10 acts as a stop layer for etching the first layer 20 of the first two-layer stack 2.
    Intermediate layer
    As illustrated in FIG. 2, step a) advantageously comprises a step a 4 ) consisting in coating the first structured electrode E1 with an intermediate layer 10 produced in the second material. Step a 4 ) is carried out by a deposition technique known to a person skilled in the art, for example by ALD ("Atomic Layer Deposition" in English "). The intermediate layer 10 is thus interposed between the first structured electrode E1 and the first bilayer stack 2. The intermediate layer 10 has a thickness suitable for the optical resonator to allow the transmission of blue light.
    [0097] Step b) is then executed so that:
    - the first two-layer stack 2 and the intermediate layer 10 have a total thickness suitable for the optical resonator to allow the transmission of green light,
    - the first and second bilayer stacks 2, 3 and the intermediate layer 10 have a total thickness suitable for the optical resonator to allow the transmission of red light.
    Such an intermediate layer 10, made of tin oxide SnO 2 , makes it possible to protect the first structured electrode El from air and humidity. In addition, such an intermediate layer 10 contributes to partially forming the spacer layer of the optical resonator.
    Electrical isolation of the sub-pixels
    As illustrated in FIGS. 11 and 12, step e) is advantageously preceded by a step e 0 ) consisting in etching the first and second bilayer stacks 2, 3 for areas intended to extend between the sub- red, green and blue pixels PR, PV, PB. Step e 0 ) is preferably carried out by dry etching. Step e 0 ) is illustrated in FIG. 12.
    Preferably, an etching agent will be chosen allowing the first and second bilayer 2, 3 stacks 2, 3 to be burned simultaneously (and not selectively) for the areas intended to extend between the red, green and blue sub-pixels PR , PV, PB, in order to reduce the operating time of the process. By way of nonlimiting example, the etchant may be hydroiodic acid. According to an alternative, step e 0 ) can be a reactive ion etching (RIE), preferably chlorinated (eg Cl 2 / Ar).
    As illustrated in FIG. 11, step e 0 ) previously comprises a step consisting in masking the zones intended to extend between the red, green and blue sub-pixels PR, PV, PB with a photosensitive resin 6 . As illustrated in FIG. 13, the photosensitive resin 6 is removed before step e) by a removal technique ("stripping" in English ") known to those skilled in the art.
    Step e 0 ) can be followed by a step (not shown) consisting in filling the zones intended to extend between the red, green and blue sub-pixels PR, PV, PB with a dielectric material , for example in the form of a resin.
    [0104] Stacking of organic electroluminescent layers
    The stack 5 of organic electroluminescent layers formed during step e) has a constant thickness for each red, green and blue sub-pixel PR, PV, PB.
    By way of nonlimiting example, the stack 5 of organic electroluminescent layers can comprise three emissive layers in tandem architecture. More precisely, when the first structured electrode E1 is an anode and the second electrode E2 is a cathode, the stack 4 can comprise:
    - A first hole transport layer formed on the first structured electrode El;
    - a first emissive layer emitting blue light, formed on the first hole transport layer;
    - a first electron transport layer, formed on the first emissive layer;
    - a charge generation layer (also called an interconnection layer), formed on the first electron transport layer;
    - a second hole transport layer, formed on the charge generation layer;
    - a second emissive layer emitting green light, formed on the second hole transport layer;
    - a third emissive layer emitting red light, formed on the second emissive layer;
    - a second electron transport layer, formed on the third emissive layer, and intended to be coated with the second electrode E2.
    As a variant, the stack 5 of organic electroluminescent layers may include:
    - three emissive layers respectively emitting blue, green and red lights without being arranged in tandem architecture (conventional structure);
    - two emissive layers respectively emitting yellow and blue lights arranged in conventional structure;
    - two emissive layers respectively emitting yellow and blue lights arranged in tandem structure.
    Step e) is carried out by deposition techniques known to those skilled in the art.
    Second electrode
    The second electrode E2 is advantageously made from a metallic material, preferably selected from Al, Ag, Pt, Cr, Ni, W, or made from a transparent conductive oxide.
    The second electrode E2 is preferably a cathode. However, the second electrode E2 can be an anode if the structure of the stack 5 of organic electroluminescent layers is reversed.
    Step f) is carried out by a deposition technique known to those skilled in the art.
    The second electrode E2 is advantageously coated with an encapsulation layer (not shown) adapted to protect from air and humidity the second electrode E2 and the stack 5 of organic electroluminescent layers.
    When the architecture is emission down, the second electrode E2 has a thickness adapted to be reflective in the visible range. The second electrode E2 can then be made for example from a metallic material. When the architecture is emitting upwards, the second electrode E2 has a thickness suitable for being semi-transparent in the visible range. The second electrode E2 can then be produced for example in a transparent conductive oxide (e.g. ITO).
    The invention is not limited to the embodiments described. A person skilled in the art is able to consider their technically effective combinations, and to substitute equivalents for them.
    权利要求:
    Claims (1)
    [1" id="c-fr-0001]
    Claims [Claim 1] Method for manufacturing a pixel of a micro-screen with organic light-emitting diodes, comprising the successive steps: a) providing a substrate (1) comprising a first structured electrode (El);b) successively forming first and second bilayer stacks (2, 3) on the first structured electrode (El), each bilayer stack (2, 3) successively comprising first and second layers (20, 21; 30, 31) produced respectively in first and second materials which are transparent conductive oxides which can be selectively etched;c) engraving the second bilayer stack (3) for an area intended to accommodate a blue sub-pixel (PB) and for an area intended to accommodate a green sub-pixel (PV), the second bilayer stack (3) being left intact under an area intended to accommodate a red sub-pixel (PR);d) engraving the first bilayer stack (2) for the area intended to accommodate the blue sub-pixel (PB), the first bilayer stack (2) being left intact under the area intended to accommodate the green sub-pixel (PV);e) forming a stack (5) of organic electroluminescent layers, configured to emit white light, and extending into the areas intended to accommodate the red, green and blue sub-pixels (PR, PV, PB);f) forming a second electrode (E2) on the stack (5) of organic electroluminescent layers so as to obtain an optical resonator with the first electrode (El);step b) being executed so that:- the first bilayer stack (2) has a thickness suitable for the optical resonator to allow the transmission of green light,- the first and second bilayer stacks (2, 3) have a total thickness suitable for the optical resonator to allow the transmission of red light. [Claim 2] The method of claim 1, wherein step a) comprises a step of coating the first electrode (El) structured with an intermediate layer (10) made of the second material, the layer
    tercalar (10) having a thickness suitable for the optical resonator to allow the transmission of blue light;step b) being executed so that:- the first bilayer stack (2) and the intermediate layer (10) have a total thickness suitable for the optical resonator to allow the transmission of green light,- the first and second bilayer stacks (2, 3) and the intermediate layer (10) have a total thickness suitable for the optical resonator to allow the transmission of red light. [Claim 3] The method of claim 1 or 2, wherein the first material is a zinc oxide ZnO, preferably doped with aluminum, and the second material is tin oxide SnO 2 . [Claim 4] Method according to claim 3, in which step c) comprises the successive steps: Ci) etching the tin oxide SnO 2 of the second bilayer stack (3) by dry or wet etching, c 2 ) etching the oxide ZnO zinc from the second bilayer stack (3) by wet etching. [Claim 5] Method according to claim 3 or 4, in which step d) comprises the successive steps: di) etching the tin oxide SnO 2 of the first bilayer stack (2) by dry or wet etching, d 2 ) etching l zinc oxide ZnO of the first bilayer stack (2) by wet etching. [Claim 6] Method according to one of claims 1 to 5, in which step c) comprises a step c 0 ) consisting in masking the zone intended to receive the red sub-pixel (PR) with a photosensitive resin (6). [Claim 7] Method according to one of claims 1 to 6, in which step d) comprises a step d 0 ) consisting in masking the zone intended to receive the green sub-pixel (PV) with a photosensitive resin (6). [Claim 8] Method according to one of claims 1 to 7, in which step e) is preceded by a step e 0 ) consisting in etching the first and second bilayer stacks (2, 3) for areas intended to extend between the red, green and blue sub-pixels (PR, PV, PB). [Claim 9] Method according to one of Claims 1 to 8, in which step b) is carried out so that:the first layer (20, 30) of each bilayer stack (2, 3) has a thickness of between 10 nm and 100 nm,
    - The second layer (21, 31) of each bilayer stack (2, 3) has a thickness less than or equal to 10 nm. [Claim 10] Method according to one of claims 1 to 9, in which the first and second electrodes (El, E2) are made of a metallic material, preferably selected from Al, Ag, Pt, Cr, Ni, W, and / or made in a transparent conductive oxide. [Claim 11] Method according to one of Claims 1 to 10, in which:- the substrate (1) provided during step a) is transparent in the visible range,- the first structured electrode (El) provided during step a) is semitransparent in the visible range,- the second electrode (E2) formed during step f) is reflective in the visible range. [Claim 12] Method according to one of Claims 1 to 10, in which:- the substrate (1) provided during step a) is made of a semiconductor material, preferably silicon, or made of glass,- the first structured electrode (El) provided during step a) is reflective in the visible range,- the second electrode (E2) formed during step f) is semitransparent in the visible range.
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    EP3671849B1|2021-04-28|
    US20200203662A1|2020-06-25|
    EP3671849A1|2020-06-24|
    CN111341943A|2020-06-26|
    KR20200076635A|2020-06-29|
    JP2020126828A|2020-08-20|
    US10944077B2|2021-03-09|
    FR3091035B1|2020-12-04|
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    法律状态:
    2019-12-31| PLFP| Fee payment|Year of fee payment: 2 |
    2020-06-26| PLSC| Publication of the preliminary search report|Effective date: 20200626 |
    2020-12-28| PLFP| Fee payment|Year of fee payment: 3 |
    2021-12-31| PLFP| Fee payment|Year of fee payment: 4 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1873304A|FR3091035B1|2018-12-19|2018-12-19|METHOD OF MANUFACTURING A PIXEL OF AN OLED MICRO-SCREEN|FR1873304A| FR3091035B1|2018-12-19|2018-12-19|METHOD OF MANUFACTURING A PIXEL OF AN OLED MICRO-SCREEN|
    US16/711,541| US10944077B2|2018-12-19|2019-12-12|Process for manufacturing a pixel of an OLED micro-display|
    EP19215903.6A| EP3671849B1|2018-12-19|2019-12-13|Method for manufacturing a pixel of an oled micro-screen|
    KR1020190169673A| KR20200076635A|2018-12-19|2019-12-18|Process for manufacturing a pixel of an oled micro-display|
    CN201911308448.9A| CN111341943A|2018-12-19|2019-12-18|Method for manufacturing pixels of an OLED microdisplay|
    JP2019228045A| JP2020126828A|2018-12-19|2019-12-18|Manufacturing process of pixel for oled microdisplay|
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